BCW61B Description
IC = 10 mA Noise figure at f = 1 kHz VCE = 5 V; IC = 200 mA VCES VCEO IC Ptot Tj max. 32 V 32 V 200 mA 250 mW 150 °C fT typ.
BCW61B is SILICON PLANAR EPITAXIAL TRANSISTORS manufactured by Continental Device India.
| Manufacturer | Part Number | Description |
|---|---|---|
NXP Semiconductors |
BCW61B | PNP Transistor |
| BCW61B | PNP Transistor | |
Infineon |
BCW61B | PNP Transistor |
| BCW61B | Transistor | |
| BCW61B | (BCW61x) Surface Mount General Purpose Si-Epi-Planar Transistors |
IC = 10 mA Noise figure at f = 1 kHz VCE = 5 V; IC = 200 mA VCES VCEO IC Ptot Tj max. 32 V 32 V 200 mA 250 mW 150 °C fT typ.