BD233 Datasheet - CDIL

EPITAXIAL SILICON POWER TRANSISTORS

BD233 General Description

Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage (RBE=1KΩ) Emitter Base Voltage Collector Current Collector Peak Current Total Dissipation @ TC=25ºC Total Dissipation @ Ta=25ºC Derate above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCBO VCEO VCER VEBO IC.

BD233 Datasheet (94.54 KB)

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BD233

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CDIL

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94.54 KB

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Epitaxial silicon power transistors.
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company EPITAXIAL SILICON POWER TRANSISTORS ECB BD233 BD235 BD237 .

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BD233 EPITAXIAL SILICON POWER TRANSISTORS CDIL

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BD233 General Description

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