BD233 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor INCHANGE Semiconductor BD233/235/237 DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 0.15A ·Complement to Type BD

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BD233 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-126F NPN 。Silicon NPN transistor in a TO-126F Plastic Package.  / Features BD234 。 Complem

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package www.datasheet4u.com ·Complement to type

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company EPITAXIAL SILICON POWER TRANSISTORS ECB BD233 BD235 BD237

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NPN Epitaxial Planar Transistors P b Lead(Pb)-Free BD233/235/237 1. EMITTER 2. COLLECTOR 3. BASE 1 23 TO-126 ABSOLUTE MAXIMUM RATINGS(TA=25ºC)

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BD233/235/237 BD233/235/237 Medium Power Linear and Switching Applications • Complement to BD 234/236/238 respectively 1 TO-126 2.Collector 3.Base

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD233/235/237 TRANSISTOR (NPN) FEATURES Complement to BD234

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: SILICON NPN EPITAXIAL BASE MESA TYPE AUDIO POWER AMPLIFIER APPLICATIONS. VERTICAL DEFLECTION OUTPUT APPLICATION IN TV. FEATURES . Designed for Compl

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