Datasheet Details
| Part number | BD236 |
|---|---|
| Manufacturer | CDIL |
| File Size | 94.54 KB |
| Description | EPITAXIAL SILICON POWER TRANSISTORS |
| Download | BD236 Download (PDF) |
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Download the BD236 datasheet PDF. This datasheet also includes the BD233 variant, as both parts are published together in a single manufacturer document.
| Part number | BD236 |
|---|---|
| Manufacturer | CDIL |
| File Size | 94.54 KB |
| Description | EPITAXIAL SILICON POWER TRANSISTORS |
| Download | BD236 Download (PDF) |
|
|
|
Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage (RBE=1KΩ) Emitter Base Voltage Collector Current Collector Peak Current Total Dissipation @ TC=25ºC Total Dissipation @ Ta=25ºC Derate above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCBO VCEO VCER VEBO IC ICM PD PD Tj, Tstg BD233 BD234 45 45 45 BD235 BD236 60 60 60 5.0 2.0 6.0 25 1.25 10 BD237 BD238 100 80 100 - 65 to +150 UNIT V V V V A A W W mW/ ºC ºC THERMAL CHARACTERISTICS Junction to Case Junction to Ambient in free air Rth (j-c) Rth (j-a) 5.0 ºC/W 100 ºC/W ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN Collector Cut off Current ICBO VCB=45V, IE=0 BD233/234 VCB=60V, IE=0 BD235/236 VCB=100V, IE=0 BD237/238 Emitter Cut off Current Collector Emitter Sustaining Voltage Collector Emitter Saturation Voltage Base Emitter Voltage TC = 150ºC VCB=45V, IE=0 BD233/234 VCB=60V, IE=0 BD235/236 VCB=100V, IE=0 BD237/238 IEBO VEB=5V, IC=0 *VCEO (sus) IC=0.1A, IB=0 BD233/234 45 BD235/236 60 BD237/238 80 *VCE (sat) IC=1.0A, IB=0.1A *VBE (on) IC=1.0A, VCE=2V TYP MAX 100 100 100 UNIT µA µA µA 2.0 mA 2.0 mA 2.0 mA 1.0 mA V V V 0.6 V 1.3 V Continental Device India Limited Data Sheet Page 1 of 4 EPITAXIAL SILICON POWER TRANSISTORS ECB BD233 BD235 BD237 NPN BD234 BD236 BD238 PNP TO126 Plastic Package ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION DC Current Gain *hFE IC=150mA, VCE=2V IC=1.0A, VCE=2V Current Gain Bandwidth Product fT IC=250mA, VCE=10V *hFE1 / hFE2 Matched Pairs IC=150mA, VCE=2V *Pulsed Pulse Duration=300µs, Duty C
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company EPITAXIAL SILICON POWER TRANSISTORS ECB BD233 BD235 BD237 NPN BD234 BD236 BD238 PNP TO126 Plastic Package Intended for use in.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BD236 | COMPLEMENTARY SILICON POWER TRANSISTORS | STMicroelectronics |
 |
BD236 | PNP Transistor | Fairchild Semiconductor |
 |
BD236 | Silicon PNP Transistor | Toshiba |
 |
BD236 | Silicon PNP Power Transistor | Inchange Semiconductor |
 |
BD236 | SILICON PNP POWER TRANSISTORS | Central Semiconductor |
| Part Number | Description |
|---|---|
| BD233 | EPITAXIAL SILICON POWER TRANSISTORS |
| BD234 | EPITAXIAL SILICON POWER TRANSISTORS |
| BD235 | EPITAXIAL SILICON POWER TRANSISTORS |
| BD237 | EPITAXIAL SILICON POWER TRANSISTORS |
| BD238 | EPITAXIAL SILICON POWER TRANSISTORS |
| BD239 | NPN PLASTIC POWER TRANSISTOR |
| BD239A | NPN PLASTIC POWER TRANSISTOR |
| BD239B | NPN PLASTIC POWER TRANSISTOR |
| BD239C | NPN PLASTIC POWER TRANSISTOR |
| BD202 | PNP PLASTIC POWER TRANSISTORS |