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BF822 - SILICON EPITAXIAL TRANSISTORS

This page provides the datasheet information for the BF822, a member of the BF820 SILICON EPITAXIAL TRANSISTORS family.

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Datasheet Details

Part number BF822
Manufacturer CDIL
File Size 77.39 KB
Description SILICON EPITAXIAL TRANSISTORS
Datasheet download datasheet BF822 Datasheet
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Full PDF Text Transcription

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BF820 BF822 SILICON EPITAXIAL TRANSISTORS N–P–N transistors Marking BF820 = 1V BF822 = 1X PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Collector–emitter voltage (RBE = 2,7 kW ) Collector current (peak value) Total power dissipation up to Tamb = 25 °C Junction temperature D.C. current gain IC = 25 mA; VCE = 20 V Feedback capacitance at f = 1 MHz IC = 0; VCE = 30 V Transition frequency at f = 35 MHz IC = 10mA; VCE = 10 V VCB0 VCE0 VCER ICM Ptot Tj BF820 max. 300 max. – max. 300 max. max. max.
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