Datasheet Details
| Part number | CSB834 |
|---|---|
| Manufacturer | CDIL |
| File Size | 241.14 KB |
| Description | PNP SILICON POWER TRANSISTOR |
| Datasheet |
 CSB834 Datasheet
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| Part number | CSB834 |
|---|---|
| Manufacturer | CDIL |
| File Size | 241.14 KB |
| Description | PNP SILICON POWER TRANSISTOR |
| Datasheet |
CSB834 Datasheet
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SYMBOL VALUE VCBO 60 Collector -Base Voltage VCEO 60 Collector -Emitter Voltage VEBO 7.0 Emitter- Base Voltage IC 3.0 Collector Current IB 0.5 Base Current PC 1.5 Power Dissipation @ Ta=25 deg C 30 Power Dissipation @ Tc=25 deg C Tj 150 Junction Temperature Tstg -55 to +150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP ICBO VCB=60V, IE=0 Collector Cut off Current IEBO VEB=7V, IC=0 Emitter Cut off Current VCEO IC=50mA, IB=0 60 Collector Emitter Voltage hFE IC=0.5A, VCE=5V 60 DC Current Gain IC=3A, VCE=5V 20 VCE(Sat) IC=3A, IB=0.3A Collector Emitter Saturation Voltage VBE(on) IC=0.5A, VCE=5V Base Emitter on Voltage Dynamic Characteristics ft VCE=5V,IC=0.5A, 9.0 Transition Frequency Cob VCB=10V, IE=0 150 Collector Output Capacitance f=1MHz Switching Time ton VCC=30V, 0.4 Turn-0n Time tstg IB1=IB2=0.2A, 1.7 Storage Time tf Pulse Width=20us 0.5 Fall Time Duty Cycle=1% hFE CLASSIFICATION:O : 60 -120, Y : 100 -200 UNIT V V V A A W W deg C deg C MAX 100 100 200 1.0 1.0 UNIT uA uA V V V MHz pF - us us us Continental Device India Limited Data Sheet Page 1 of 3 TO-220 Plastic Package C E D IM A B C D E F G H J K L M N O M IN .
M AX .
B H F N L O 1 2 3 www.DataSheet4U.com D J G M All diminsions in mm.
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON POWER TRANSISTOR CSB834 TO-220 www.DataSheet4U.com Audio Frequency Power Amplifier Applications.
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