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MCR100-6 Datasheet Preview

MCR100-6 Datasheet

SENSITIVE GATE SILICON CONTROLLED RECTIFIERS

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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
REVERSE BLOCKING TYRISTORS
MCR100
TO-92
Plastic Package
PNPN Device Designed for High Volume, Line-Powered Consumer Applications such as Relay and Lamp
Drivers, Small Motor Controls, Gate Drivers for Larger Thyristors and Sensing and Detection Circuits
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Peak Repetitive Off State Voltage
*VDRM
(Tj= - 40 to 110ºC, Sine Wave, 50 to 60Hz;
Gate Open)
*VRRM
MCR100-3
MCR100-4
MCR100-6
MCR100-8
On State RMS Current
Conduction Angles
(TC=80ºC) 180º
IT(RMS)
Peak Non Repetitive Surge Current (1/2
Cycle, Sine Wave, 60Hz, TJ=25ºC)
Circuit Fusing Consideration (t=8.3ms)
ITSM
I2t
Forward Peak Gate Power
Pulse Width <1µ s)
(Ta=25ºC,
Forward Average Gate Power (Ta=25ºC,
t=8.3ms)
Forward Peak Gate Current
Pulse Width <1µ s)
(Ta=25ºC,
Reverse Peak Gate Voltage
Pulse Width <1µ s)
(Ta=25ºC,
Operating Junction Temperature Range
@ Rate VRRM and VDRM
Storage Temperature Range
PGM
PG (AV)
IGM
VGRM
Tj
Tstg
VALUE
UNITS
100
200
400
600
0.8
10
0.415
0.1
0.1
1.0
5.0
- 40 to +110
- 40 to +150
V
V
V
V
A
A
A2s
W
W
A
V
ºC
ºC
*VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate
voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode.
Blocking voltage shall not be tested with a constant current source such that the voltage ratings of the devices
are exceeded
MCR100 Rev190404E
Continental Device India Limited
Data Sheet
Page 1 of 4




CDIL

MCR100-6 Datasheet Preview

MCR100-6 Datasheet

SENSITIVE GATE SILICON CONTROLLED RECTIFIERS

No Preview Available !

SENSITIVE GATE SILICON CONTROLLED RECTIFIER
REVERSE BLOCKING TYRISTORS
MCR100
TO-92
Plastic Package
THERMAL CHARACTERISTICS
Junction to Case
Junction to Ambient in free air
Lead Solder Temperature
(1/16" from case, 10secs max)
Rth (j-c)
Rth (j-a)
TL
ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise)
OFF CHARACTERISTICS
CHARACTERISTICS
SYMBOL TEST CONDITION
Peak Repetitive Forward or Reverse
Blocking Current
**IDRM, **IRRM
VD=Rated VDRM and
VRRM; RGK=1K
TC=25ºC
TC=110ºC
ON CHARACTERISTICS
CHARACTERISTICS
Peak Forward On State Voltage (note1)
Gate Trigger Current (Continuous DC)
Holding Current
Latching Current
Gate Trigger Voltage (Continuous DC)
SYMBOL
VTM
***IGT
**IH
IL
***VGT
TEST CONDITION
ITM=1A peak @
Ta=25ºC
VAK=7V, RL=100,
Tc=25ºC
VAK=7V,
initiating
Current 20mA
TC=25ºC
TC= -40ºC
VAK=7V, IG=200µA
TC=25ºC
TC= -40ºC
VAK=7V, RL=100
TC=25ºC
TC= -40ºC
DYNAMIC CHARACTERISTICS
PARAMETER
Critical Rate of Rise of off State Voltage
SYMBOL
dv /dt
TEST CONDITION
VD=Rated VDRM,
exponential waveform,
RGK=1000, Tj=110ºC
MIN
MIN
MIN
20
Critical Rate of Rise of on State Current
di/dt IPK=20A, Pw=10µs,
dig/dt=1A/µs, Igt=20mA
75
200
260
TYP
TYP
TYP
MAX
10
100
MAX
1.7
0.2
5.0
10
10
15
0.8
1.2
MAX
50
ºC/W
ºC/W
ºC
UNIT
µA
µA
UNIT
V
mA
mA
mA
mA
mA
V
V
UNIT
V/µs
A/µs
Note1 Pulse Test: Pulse Width <1ms, Duty Cycle <1%
***Does not include RGK in measurment
MCR100 Rev190404E
**RGK=1000include in measurement
Continental Device India Limited
Data Sheet
Page 2 of 4


Part Number MCR100-6
Description SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
Maker CDIL
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