Download the P2N2907A datasheet PDF.
This datasheet also covers the P2N2907 variant, as both devices belong to the same pnp silicon transistor family and are provided as variant models within a single manufacturer datasheet.
General Description
SYMBOL
P2N2907
Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage
VCEO VCBO VEBO
40 60
5
Collector Current Total Power Dissipation @ Ta=25ºC Derate above 25ºC
ICM PD
600 625
5
Total Power Dissipation @ TC=25ºC Derate above 25ºC
PD
1.5 12
Operating and Storage Junction
Full PDF Text Transcription for P2N2907A (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
P2N2907A. For precise diagrams, and layout, please refer to the original PDF.
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS P2N2907 P2N2907A TO-92 Plastic Package...
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ON PLANAR EPITAXIAL TRANSISTORS P2N2907 P2N2907A TO-92 Plastic Package CB E Designed for switching and linear applications, DC amplifier and driver for industrial applications ABSOLUTE MAXIMUM RATINGS (Ta=25ºC Unless Specified Otherwise) DESCRIPTION SYMBOL P2N2907 Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage VCEO VCBO VEBO 40 60 5 Collector Current Total Power Dissipation @ Ta=25ºC Derate above 25ºC ICM PD 600 625 5 Total Power Dissipation @ TC=25ºC Derate above 25ºC PD 1.
P2N2907A Datasheet
