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NE68130 Datasheet

NPN SILICON RF TRANSISTOR

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DATA SHEET
NPN SILICON RF TRANSISTOR
NE68130
/
2SC4227 JEITA
Part No.
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
3-PIN SUPER MINIMOLD
DESCRIPTION
The NE68130 / 2SC4227 is a low supply voltage transistor designed for VHF, UHF low noise amplifier.
It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin
super minimold package.
FEATURES
• Low noise : NF = 1.4 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz
• High gain : S21e2 = 12 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz
• 3-pin super minimold package
ORDERING INFORMATION
Part Number
NE68130 -A
2SC4227 -A
NE68130-T1-A
2SC4227-T1-A
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 3 (Collector) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
P Note
tot
Tj
Tstg
Ratings
20
10
1.5
65
150
150
65 to +150
Unit
V
V
V
mA
mW
°C
°C
Note Free air
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Document No. PU10451EJ01V0DS (1st edition)
(Previous No. P10371EJ2V0DS00)
Date Published December 2003 CP(K)
The mark  shows major revised points.




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NE68130 Datasheet Preview

NE68130 Datasheet

NPN SILICON RF TRANSISTOR

No Preview Available !

ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Symbol
Test Conditions
ICBO VCB = 10 V, IE = 0 mA
IEBO VEB = 1 V, IC = 0 mA
hFE Note 1 VCE = 3 V, IC = 7 mA
fT VCE = 3 V, IC = 7 mA
S21e2 VCE = 3 V, IC = 7 mA, f = 1 GHz
NF VCE = 3 V, IC = 7 mA, f = 1 GHz
Cre Note 2 VCB = 3 V, IE = 0 mA, f = 1 MHz
Notes 1. Pulse measurement: PW 350 μs, Duty Cycle 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
Marking
hFE Value
R33
R33
40 to 90
R34
R34
70 to 150
R35
R35
110 to 240
NE68130 / 2SC4227
MIN.
TYP.
MAX.
Unit
− − 0.8 μA
− − 0.8 μA
40 240
4.5 7.0
– GHz
10 12 dB
1.4 2.7 dB
0.45 0.9 pF
2 Data Sheet PU10451EJ01V0DS


Part Number NE68130
Description NPN SILICON RF TRANSISTOR
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