NE68619 - SILICON TRANSISTOR
NE68619 Features
* HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz
* LOW VOLTAGE/LOW CURRENT OPERATION
* HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz |S21E|2 = 11 dB @ 1 V, 5 mA, 2 GHz
* LOW NOISE: 1.5 dB AT 2.0 GHz
* AVAILABLE IN SIX LOW COST PLASTIC SURFACE MOUNT