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UPA901TU - NPN SiGe RF IC IN A 8-PIN LEAD-LESS MINIMOLD

Description

NEC's UPA901TU is a silicon germanium HBT IC designed for the power amplifier of 5.8 GHz cordless phone and other 5.8 GHz applications.

This IC consists of two stage amplifiers and has excellent performance, high efficiency, high gain, low power consumption.

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Datasheet Details

Part number UPA901TU
Manufacturer CEL
File Size 602.41 KB
Description NPN SiGe RF IC IN A 8-PIN LEAD-LESS MINIMOLD
Datasheet download datasheet UPA901TU Datasheet
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DATA SHEET www.DataSheet4U.com NEC's NPN SiGe RF IC UPA901TU IN A 8-PIN LEAD-LESS MINIMOLD FEATURES DESCRIPTION NEC's UPA901TU is a silicon germanium HBT IC designed for the power amplifier of 5.8 GHz cordless phone and other 5.8 GHz applications. This IC consists of two stage amplifiers and has excellent performance, high efficiency, high gain, low power consumption. NEC's UPA901TU is packaged in surface mount 8-pin leadless minimold plastic package. This device is fabricated with our SiGe HBT process UHS2HV technology. • • • • • OUTPUT POWER: Pout = 19 dBm @ Pin = −3 dBm, VCE = 3.6 V, f = 5.8 GHz LOW POWER: IC = 90 mA @ Pin = −3 dBm, VCE = 3.6 V, f = 5.8 GHz SINGLE POWER SUPPLY OPERATION: VCE = 3.6 V BUILT-IN BIAS CIRCUIT 8-PIN LEAD-LESS MINIMOLD: (2.0 × 2.2 × 0.5 mm) APPLICATIONS • 5.
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