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CEB07N65A Datasheet Preview

CEB07N65A Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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CEB07N65A pdf
CEP07N65A/CEB07N65A
CEF07N65A
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP07N65A
CEB07N65A
CEF07N65A
VDSS
650V
650V
650V
RDS(ON)
1.45Ω
1.45Ω
1.45Ω
ID @VGS
7A 10V
7A 10V
7A d 10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D
DG
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263 TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM e
PD
650
±30
7
5
28
150
1
7
5d
28 d
48
0.5
Single Pulsed Avalanche Energy h
EAS 150
Single Pulsed Avalanche Current h
IAS 5
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1
62.5
3.1
65
Units
V
V
A
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 2. 2013.Jan
http://www.cetsemi.com



CET
CET

CEB07N65A Datasheet Preview

CEB07N65A Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CEB07N65A pdf
CEP07N65A/CEB07N65A
CEF07N65A
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Symbol
Test Condition
BVDSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
VGS = 0V, ID = 250µA
VDS = 650V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
VGS = VDS, ID = 250µA
VGS = 10V, ID = 3A
Gate input resistance
Rg f=1MHz,open Drain
Dynamic Characteristics c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 300V, ID = 6A,
VGS = 10V, RGEN =25
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 480V, ID = 6A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
IS f
Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 3A g
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e.Pulse width limited by safe operating area .
f.Full package IS(max) = 1A .
g.Full package VSD test condition IS = 1A .
h.L = 12mH, IAS =5A, VDD = 50V, RG = 25, Starting TJ = 25 C.
Min
650
2
Typ
1.15
1.5
1410
115
15
26
58
85
63
28
6
9
Max Units
1
100
-100
V
µA
nA
nA
4V
1.45
pF
pF
pF
52 ns
116 ns
170 ns
126 ns
36 nC
nC
nC
7A
1.5 V
4
2


Part Number CEB07N65A
Description N-Channel Enhancement Mode Field Effect Transistor
Maker CET
Total Page 4 Pages
PDF Download
CEB07N65A pdf
CEB07N65A Datasheet PDF
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