CEB12P10 Key Features
- 100V, -11A, RDS(ON) =315mΩ @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current h
- Part: CEB12P10
- Manufacturer: CET
- Size: 104.72 KB
Related CET Datasheets
| Part Number | Description |
|---|---|
| CEB12N5 | N-Channel MOSFET |
| CEB12N6 | N-Channel MOSFET |
| CEB12N65 | N-Channel Enhancement Mode Field Effect Transistor |
| CEB10N4 | N-Channel MOSFET |
| CEB10N6 | N-Channel MOSFET |
CEB12P10 Description
CEP12P10/CEB12P10 P-Channel Enhancement Mode Field Effect Transistor.