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CEP12N5/CEB12N5
CEF12N5
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type CEP12N5 CEB12N5 CEF12N5
VDSS 500V 500V
500V
RDS(ON) 0.54Ω 0.54Ω
0.54Ω
ID 12A 12A 12A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
D
DG
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM e
PD
500
±30
12 48 166 1.3
12 d 48d 50 0.
CEB12N5 Datasheet
