CEB12P10 Overview
CEP12P10/CEB12P10 P-Channel Enhancement Mode Field Effect Transistor.
CEB12P10 Key Features
- 100V, -11A, RDS(ON) =315mΩ @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current h
CEB12P10 datasheet by CET.
| Part number | CEB12P10 |
|---|---|
| Datasheet | CEB12P10_CET.pdf |
| File Size | 104.72 KB |
| Manufacturer | CET |
| Description | P-Channel MOSFET |
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CEP12P10/CEB12P10 P-Channel Enhancement Mode Field Effect Transistor.
| Part Number | Description |
|---|---|
| CEB12N5 | N-Channel MOSFET |
| CEB12N6 | N-Channel MOSFET |
| CEB12N65 | N-Channel Enhancement Mode Field Effect Transistor |
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| CEB10N6 | N-Channel MOSFET |
| CEB110P03 | P-Channel MOSFET |
| CEB1165 | N-Channel MOSFET |
| CEB1175 | N-Channel MOSFET |
| CEB1185 | N-Channel MOSFET |
| CEB1186 | N-Channel MOSFET |