100V, 50A, RDS(ON) = 30mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D
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CEB.
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CEB1012 - N-Channel Enhancement Mode Field Transistor (Chino-Excel Technology)
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