CEB5175
CEB5175 is P-Channel MOSFET manufactured by CET.
FEATURES
-55V, -50A, RDS(ON) = 23mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; Ro HS pliant.
TO-220 & TO-263 package.
CEB SERIES TO-263(DD-PAK)
CEP SERIES TO-220
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS -55
VGS ±20
Drain Current-Continuous @ TC = 25 C @ TC = 100 C
-50 -32
Drain Current-Pulsed a
IDM -200
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
96 0.77
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units V V A A A W
W/ C
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
This is preliminary information on a new product in development now . Details are subject to change without notice .
Limit 1.3 62.5
Units C/W...
