CEB5175 Description
CEP5175/CEB5175 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY.
CEB5175 Key Features
- 55V, -50A, RDS(ON) = 23mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V
CEB5175 is P-Channel MOSFET manufactured by CET.
| Part Number | Description |
|---|---|
| CEB51A3 | N-Channel MOSFET |
| CEB50N06 | N-Channel MOSFET |
| CEB50N10 | N-Channel MOSFET |
| CEB50P03 | P-Channel MOSFET |
| CEB540A | N-Channel MOSFET |
CEP5175/CEB5175 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY.