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CEP50N10/CEB50N10
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
100V, 50A, RDS(ON) = 30mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
D
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 100
VGS ±25
Drain Current-Continuous Drain Current-Pulsed a
ID 50 IDM 200
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
PD
136 0.91
Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range
EAS IAS TJ,Tstg
397 43.
CEB50N10 Datasheet
