CEB540N
CEB540N is N-Channel MOSFET manufactured by CET.
FEATURES
100V, 36A, RDS(ON) = 53mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
CEB SERIES TO-263(DD-PAK)
CEP SERIES TO-220
D S CEF SERIES
TO-220F
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 100
VGS ±20
Drain Current-Continuous Drain Current-Pulsed a
ID 36 IDM 120
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
140 0.91
Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d
EAS 310 IAS 18
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Units V V A A W
W/ C m J A C
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 1.1 62.5
Units C/W C/W
. Details are subject to change without notice .
Rev .3 2008.Oct. http://.cet-mos.
CEP540N/CEB540N...