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CEB75N10 Datasheet Preview

CEB75N10 Datasheet

N-Channel MOSFET

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CEP75N10/CEB75N10
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
100V, 72A, RDS(ON) = 15m@VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ TC = 25 C
Drain Current-Continuous @ TC = 100 C
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
Operating and Store Temperature Range
Tc = 25 C unless otherwise noted
Symbol
Limit
VDS 100
VGS ±20
ID 72
51
IDM 250
100
PD 0.66
EAS
IAS
TJ,Tstg
132
23
-55 to 175
Units
V
V
A
A
A
W
W/ C
mJ
A
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.5
62.5
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 3. 2011.Dec
http://www.cetsemi.com




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CEB75N10 Datasheet Preview

CEB75N10 Datasheet

N-Channel MOSFET

No Preview Available !

CEP75N10/CEB75N10
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 100V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics c
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 25A
gFS
Ciss
Coss
Crss
VDS = 25V, ID = 25A
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 50V, ID = 30A,
VGS = 10V, RGEN = 5.6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 80V, ID = 70A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 25A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 0.5mH, IAS = 23A, VDD = 24V, RG = 25Ω, Starting TJ = 25 C
Min
100
2
Typ Max Units
1
100
-100
V
µA
nA
nA
4V
12 15 m
21
3790
240
140
S
pF
pF
pF
27 54 ns
9 18 ns
66 132 ns
12 24 ns
70 91 nC
14 nC
16 nC
72 A
1.3 V
2


Part Number CEB75N10
Description N-Channel MOSFET
Maker CET
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