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CED02N65D Datasheet Preview

CED02N65D Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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CED02N65D pdf
CED02N65D/CEU02N65D
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
650V, 1.8A, RDS(ON) = 6.9 @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
650
±30
1.8
7.2
35
0.29
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Avalanche Current
Operating and Store Temperature Range
IAS
TJ,Tstg
1.4
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
3.5
50
Units
V
V
A
A
W
W/ C
C
A
C
Units
C/W
C/W
2009.July
6-1
http://www.cetsemi.com



CET
CET

CED02N65D Datasheet Preview

CED02N65D Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CED02N65D pdf
CED02N65D/CEU02N65D
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Off Characteristics
Symbol
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 650V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 0.8A
Forward Transconductance
Dynamic Characteristics c
gFS VDS = 10V, ID = 0.6A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 300V, ID = 1.3A,
VGS = 10V, RGEN = 4.7
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 480V, ID = 1.3A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 0.6A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 100mH, IAS = 1.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C
Min
650
2.5
Typ
5.6
0.8
270
55
25
11
10
27
7.5
15.5
1
10
Max Units
1
100
-100
V
µA
nA
nA
4.5 V
6.9
S
pF
pF
pF
14.3 ns
13 ns
35.1 ns
9.75 ns
20.1 nC
nC
nC
6A
1.5 V
6
6-2


Part Number CED02N65D
Description N-Channel Enhancement Mode Field Effect Transistor
Maker CET
Total Page 4 Pages
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CED02N65D pdf
CED02N65D Datasheet PDF
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