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CEM3082 Datasheet Preview

CEM3082 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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CEM3082 pdf
CEM3082
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 12A, RDS(ON) = 10.5m@VGS = 10V.
RDS(ON) = 15.0m@VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
DD D D
8 7 65
SO-8
1
1 234
S SSG
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 30
VGS ±20
Drain Current-Continuous
Drain Current-Pulsed a
ID 12
IDM 50
Maximum Power Dissipation
PD 2.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
50
Units
V
V
A
A
W
C
Units
C/W
Details are subject to change without notice .
1
Rev 2. 2006.Nov
http://www.cetsemi.com



CET
CET

CEM3082 Datasheet Preview

CEM3082 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CEM3082 pdf
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 24V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics d
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250µA
VGS = 10V, ID = 12A
VGS = 4.5V, ID = 10A
VDS = 5V, ID = 10A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
Crss
VDS = 15V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 15V, ID = 1A,
VGS = 10V, RGEN = 6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 15V, ID = 12A,
VGS = 5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = 4.5A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
CEM3082
Min Typ Max Units
30 V
1 µA
100 nA
-100 nA
1 3V
8.5 10.5 m
11 15 m
18 S
2115
410
265
pF
pF
pF
15 30
9 18
45 90
15 30
19.6 26
6.5
6.0
ns
ns
ns
ns
nC
nC
nC
4.5 A
1.0 V
2


Part Number CEM3082
Description N-Channel Enhancement Mode Field Effect Transistor
Maker CET
Total Page 4 Pages
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