CEM3082 transistor equivalent, n-channel enhancement mode field effect transistor.
30V, 12A, RDS(ON) = 10.5mΩ @VGS = 10V. RDS(ON) = 15.0mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Le.
Image gallery
Download