CEM4308 transistor equivalent, dual n-channel enhancement mode field effect transistor.
40V, 5.8A, RDS(ON) = 38mΩ RDS(ON) = 50mΩ @VGS = 10V. @VGS = 4.5V.
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Super high dense cell design for extremely low RDS(ON). High power and current handing capability. L.
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