CEM6405 transistor equivalent, p-channel enhancement mode field effect transistor.
-60V, -5.7A, RDS(ON) = 48mΩ @VGS = -10V. RDS(ON) = 68mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. R.
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