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CEP01N6G Datasheet Preview

CEP01N6G Datasheet

N-Channel MOSFET

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CEP01N6G/CEB01N6G
CEF01N6G
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP01N6G
CEB01N6G
CEF01N6G
VDSS
600V
600V
600V
RDS(ON)
9.3Ω
9.3Ω
9.3Ω
ID @VGS
1A 10V
1A 10V
1A d 10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D
DG
GS
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM e
PD
600
±30
1
4
41
0.33
1d
4d
27
0.22
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
3
62.5
4.5
65
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 1. 2009.July
http://www.cet-mos.com




CET

CEP01N6G Datasheet Preview

CEP01N6G Datasheet

N-Channel MOSFET

No Preview Available !

CEP01N6G/CEB01N6G
CEF01N6G
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 600V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 0.6A
Dynamic Characteristics c
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
gFS
Ciss
Coss
Crss
VDS = 15V, ID = 0.5A
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 300V, ID = 1A,
VGS = 10V, RGEN =10
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 300V, ID = 1A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
IS f
Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 0.5A g
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e.Pulse width limited by safe operating area .
f.Full package IS(max) = 0.9A .
g.Full package VSD test condition IS = 0.9A .
Min
600
2
Typ
7.3
210
55
25
20
11
26
18.5
7.2
1.7
4
Max Units
20
100
-100
V
µA
nA
nA
4V
9.3
10 S
pF
pF
pF
26 ns
14.3 ns
33.8 ns
24 ns
9.4 nC
nC
nC
1A
1.5 V
4
2


Part Number CEP01N6G
Description N-Channel MOSFET
Maker CET
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CEP01N6G Datasheet PDF





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