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CEP6186 - N-Channel MOSFET

Key Features

  • 60V, 33A, RDS(ON) = 25mΩ @VGS = 10V. RDS(ON) = 32mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S.

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Datasheet Details

Part number CEP6186
Manufacturer CET
File Size 388.27 KB
Description N-Channel MOSFET
Datasheet download datasheet CEP6186 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CEP6186/CEB6186 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 33A, RDS(ON) = 25mΩ @VGS = 10V. RDS(ON) = 32mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedz Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 60 ±20 33 132 43 0.