CEP6186 Datasheet | CET

FEATURES 60V, 33A, RDS(ON) = 25mΩ @VGS = 10V. RDS(ON) = 32mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. CEB SERIES TO-263(DD-PAK) CEP SERIES TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedz Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM ±20 33 132 43 0.28 Operating and Store Temperature Range TJ,Tstg -55 to 175 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 3.5 62.5 Units V V A A W W/ C C Units C/W C/W Details are subject to change without notice . Rev 4. 2011.Feb http://.cet-mos. CEP6186/CEB6186 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Symbol Test Condition BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on)...