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CEP730G Datasheet Preview

CEP730G Datasheet

N-Channel MOSFET

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CEP730G/CEB730G
CEF730G
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type
CEP730G
CEB730G
VDSS
400V
400V
CEF730G
400V
RDS(ON)
1
1
1Ω
ID
5.5A
5.5A
5.5A e
@VGS
10V
10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D
G
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS 400
VGS ±30
ID 5.5 5.5 e
IDM f
22 22 e
83 41
PD 0.66 0.32
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.5
62.5
2.5
65
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2009.Nov.
http://www.cet-mos.com




CET

CEP730G Datasheet Preview

CEP730G Datasheet

N-Channel MOSFET

No Preview Available !

CEP730G/CEB730G
CEF730G
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Off Characteristics
Symbol
Test Condition
Min Typ Max Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 400V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
400
10
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
VGS = VDS, ID = 250µA
2
4
RDS(on)
VGS = 10V, ID = 3A
0.8 1
V
Forward Transconductance
Dynamic Characteristics c
gFS VDS = 50V, ID = 5A
6S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
590
105
pF
pF
Crss 20 pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 200V, ID = 3.5A,
VGS = 10V, RGEN =12
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 320V, ID =3.5A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS f
VSD
VGS = 0V, IS = 3A
15 30 ns
7 14 ns
30 60 ns
5 10 ns
14 18 nC
2.5 nC
6 nC
5.5 A
1.5 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e.Pulse width limited by safe operating area .
f.Full package IS(max) = 5A .
2


Part Number CEP730G
Description N-Channel MOSFET
Maker CET
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