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CEP830G Datasheet Preview

CEP830G Datasheet

N-Channel MOSFET

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CEP830G/CEB830G
CEF830G
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP830G
CEB830G
VDSS
500V
500V
CEF830G
500V
RDS(ON)
1.5
1.5Ω
1.5
ID @VGS
5A 10V
5A 10V
5A e 10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D
G
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS
VGS
ID
IDM f
500
±30
5
20
5e
20 e
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
83 42
PD 0.66 0.33
Single Pulsed Avalanche Energy g
EAS 39.2
Single Pulsed Avalanche Current g
Operating and Store Temperature Range
IAS
TJ,Tstg
2.8
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.5
62.5
3.6
65
Units
V
V
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 2. 2014.Sep.
http://www.cet-mos.com




CET

CEP830G Datasheet Preview

CEP830G Datasheet

N-Channel MOSFET

No Preview Available !

CEP830G/CEB830G
CEF830G
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 500V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
500
1
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA 2.5
4
VGS = 10V, ID = 2.5A
1.2 1.5
V
Dynamic Characteristics c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
595
90
pF
pF
Crss 20 pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 250V, ID = 5A,
VGS = 10V, RGEN = 14
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 400V, ID = 5A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
15 30 ns
8 16 ns
30 60 ns
7 14 ns
13 17 nC
2.5 nC
5 nC
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS f
VSD
VGS = 0V, IS = 3.1A
5A
1.6 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e.Pulse width limited by safe operating area .
f.Full package IS(max) = 4A .
g.L = 10mH, IAS =2.8A, VDD = 50V, RG = 25, Starting TJ = 25 C
2


Part Number CEP830G
Description N-Channel MOSFET
Maker CET
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