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CEP830G - N-Channel MOSFET

Features

  • Type CEP830G CEB830G VDSS 500V 500V CEF830G 500V RDS(ON) 1.5Ω 1.5Ω 1.5Ω ID @VGS 5A 10V 5A 10V 5A e 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D G D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S.

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Datasheet Details

Part number CEP830G
Manufacturer CET
File Size 505.37 KB
Description N-Channel MOSFET
Datasheet download datasheet CEP830G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CEP830G/CEB830G CEF830G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP830G CEB830G VDSS 500V 500V CEF830G 500V RDS(ON) 1.5Ω 1.5Ω 1.5Ω ID @VGS 5A 10V 5A 10V 5A e 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D G D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS VGS ID IDM f 500 ±30 5 20 5e 20 e Maximum Power Dissipation @ TC = 25 C - Derate above 25 C 83 42 PD 0.66 0.33 Single Pulsed Avalanche Energy g EAS 39.
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