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CET01N65A Datasheet Preview

CET01N65A Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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CET01N65A pdf
CET01N65A
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
650V, 0.3A, RDS(ON) = 15@VGS = 10V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead-free plating ; RoHS compliant.
SOT-223 package.
D
DS
D
G
SOT-223
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 650
VGS ±20
Drain Current-Continuous
Drain Current-Pulsed a
ID 0.3
IDM 1.2
Maximum Power Dissipation
PD 3
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
42
Units
V
V
A
A
W
C
Units
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2011.Sep
http://www.cetsemi.com



CET
CET

CET01N65A Datasheet Preview

CET01N65A Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CET01N65A pdf
CET01N65A
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 650V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
650
1
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 0.2A
2
4
12 15
V
Dynamic Characteristics d
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
170
60
pF
pF
Crss 30 pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 300V, ID = 0.3A,
VGS = 10V, RGEN = 4.7
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 480V, ID = 0.3A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
10 20 ns
11 22 ns
24 48 ns
62 124 ns
10 12.8 nC
0.6 nC
7.5 nC
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = 0.2A
0.3 A
1.5 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2


Part Number CET01N65A
Description N-Channel Enhancement Mode Field Effect Transistor
Maker CET
Total Page 5 Pages
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