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CEU12P15 Datasheet Preview

CEU12P15 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

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CEU12P15 pdf
CED12P15/CEU12P15
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-150V, -12A, RDS(ON) = 0.24@VGS = -10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage(Typ)
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
-150
±20
-12
-48
60
0.48
Single Pulsed Avalanche Energy e
EAS 250
Single Pulsed Avalanche Current e
IAS 10
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
2.1
50
Units
V
V
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice
1
Rev 1. 2013.Feb
http://www.cetsemi.com



CET
CET

CEU12P15 Datasheet Preview

CEU12P15 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CEU12P15 pdf
CED12P15/CEU12P15
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Symbol
Test Condition
Min
BVDSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
VGS = 0V, ID = -250µA
VDS = -135V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VGS = VDS, ID = -250µA
VGS = -10V, ID = -7.5A
-2
Gate input resistance
Dynamic Characteristics d
Rg f=1MHz,open Drain
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
Crss
VDS = -25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
td(on)
Turn-On Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = -75V, ID = -7.5A,
VGS = -10V, RGEN = 10
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS = -120V, ID = -7.5A,
VGS = -10V
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = -12A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
e.L = 5mH, IAS =10A, VDD = 25V, RG = 25, Starting TJ = 25 C
Typ
-150
0.2
5.3
1245
175
35
18
8
63
14
31
5
12
Max Units
-1
100
-100
V
µA
nA
nA
-4 V
0.24
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
-12 A
-1.2 V
5
2


Part Number CEU12P15
Description P-Channel Enhancement Mode Field Effect Transistor
Maker CET
Total Page 4 Pages
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CEU12P15 pdf
CEU12P15 Datasheet PDF
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