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CEU4269A Datasheet Preview

CEU4269A Datasheet

Dual N- & P-Channel Enhancement Mode Field Effect Transistor

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CEU4269A pdf
CEU4269A
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
PRELIMINARY
FEATURES
40V , 8A , RDS(ON) = 32m@VGS = 10V.
RDS(ON) = 46m@VGS = 4.5V.
-40V , -8A , RDS(ON) = 48m@VGS = 10V.
RDS(ON) = 78m@VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
G1
High power and current handing capability.
Lead free product is acquired.
TO-252-4L package.
S1
G1
S2
G2
D1/D2
CEU SERIES
TO-252-4L
D1/D2
G2
S1
S2
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
N-Channel P-Channel
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous e
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS 40 40
VGS ±20 ±20
ID e 8 -8
IDM 32 -32
10.4
PD 0.08
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units
V
V
A
A
W
W/ C
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
12
50
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2006.July
http://www.cetsemi.com



CET
CET

CEU4269A Datasheet Preview

CEU4269A Datasheet

Dual N- & P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CEU4269A pdf
CEU4269A
N-Channel Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 40V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
40
1
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics d
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
VGS(th)
RDS(on)
gFS c
Ciss
Coss
Crss
VGS = VDS, ID = 250µA
VGS = 10V, ID = 6A
VGS = 4.5V, ID = 5A
VDS = 10V, ID = 7A
VDS = 20V, VGS = 0V,
f = 1.0 MHz
1
3V
26 32 m
36 46 m
3S
970 pF
165 pF
110 pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 20V, ID = 6A,
VGS = 10V, RGEN = 3
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 20V, ID = 6A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = 1A
14 28 ns
10 20 ns
28 56 ns
6 12 ns
20 27 nC
5.8 nC
1.4 nC
8A
1.2 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
e.The maximum current rating is limited by bond-wires.
2


Part Number CEU4269A
Description Dual N- & P-Channel Enhancement Mode Field Effect Transistor
Maker CET
Total Page 7 Pages
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