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CEZ3R02 Datasheet Preview

CEZ3R02 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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CEZ3R02 pdf
CEZ3R02
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
30V, 135A, RDS(ON) = 2.3m@VGS = 10V.
RDS(ON) = 3.8m@VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
DDDD
GSSS
PR-PACK (5*6)
DD D D
8 7 65
1 234
S SSG
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 30
VGS ±20
Drain Current-Continuous
Drain Current-Continuous
Drain Current-Pulsed a
Drain Current-Pulsed a
ID @TA
ID @TC
IDM @TA
IDM @TC
36
135
144
540
Maximum Power Dissipation
PD 83
Single Pulsed Avalanche Energy e
Single Pulsed Avalanche Current e
Operating and Store Temperature Range
EAS
IAS
TJ,Tstg
800
40
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJC
RθJA
Limit
1.5
20
Units
V
V
A
A
A
A
W
mJ
A
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2011.Aug
http://www.cetsemi.com



CET
CET

CEZ3R02 Datasheet Preview

CEZ3R02 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

CEZ3R02 pdf
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Off Characteristics
Symbol
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 30V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Gate input resistance
Dynamic Characteristics d
VGS(th)
RDS(on)
Rg
VGS = VDS, ID = 250µA
VGS = 10V, ID =30A
VGS = 4.5V, ID =20A
f=1MHz,open Drain
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
Crss
VDS = 15V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 15V, ID = 15A,
VGS = 10V, RGEN = 1
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 15V, ID = 15A,
VGS = 4.5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = 20A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
e.L = 1mH, IAS =40A, VDD = 24V, RG = 25Ω, Starting TJ = 25 C
CEZ3R02
Min Typ Max Units
30 V
1 µA
100 nA
-100 nA
1 3V
1.9 2.3 m
3.0 3.8 m
2.1
4100
980
600
pF
pF
pF
44 88 ns
38 76 ns
63 126 ns
30 60 ns
51 66 nC
14 nC
22 nC
80 A
1V
2


Part Number CEZ3R02
Description N-Channel Enhancement Mode Field Effect Transistor
Maker CET
Total Page 4 Pages
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