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CEZ3R03 - N-Channel MOSFET

Features

  • 30V, 85A, RDS(ON) = 4.0mΩ @VGS = 10V. RDS(ON) = 6.0mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DDDD GSSS PR-PACK (5.
  • 6) DD D D 8 7 65 1 234 S SSG.

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Datasheet Details

Part number CEZ3R03
Manufacturer CET
File Size 391.85 KB
Description N-Channel MOSFET
Datasheet download datasheet CEZ3R03 Datasheet

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Full PDF Text Transcription

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CEZ3R03 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 85A, RDS(ON) = 4.0mΩ @VGS = 10V. RDS(ON) = 6.0mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
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