Datasheet Summary
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
Features
30V, 135A, RDS(ON) = 2.3mΩ @VGS = 10V. RDS(ON) = 3.8mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired. Surface mount Package.
DDDD
GSSS
PR-PACK (5- 6)
DD D D 8 7 65
1 234 S...