Datasheet Summary
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
Features
60V, 87A, RDS(ON) = 5.5mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS pliant.
Surface mount Package.
DDDD
GSSS
PR-PACK (5- 6)
DD D D 8 7 65
1 234 S...