40N10B Datasheet | CHONGQING PINGYANG

FEATURE - 40A,100V,RDS(ON)=40mΩ@VGS=10V/20A - Low gate charge - Low Ciss - Fast switching - 100% avalanche tested - Improved dv/dt capability TO-220AB 40N10 ITO-220AB 40N10F TO-263 40N10B TO-262 40N10H Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Avalanche Current(Note1) Repetitive Avalanche Energy (Note1) Reverse Diode d V/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds VDSS VGSS ID IDM EAS IAR EAR dv/dt TJ,TSTG Mounting Torque 6-32 or M3 screw 40N10 100 ±20 40 100 500 40 50 4.0 -55 to +150 10 1.1 UNIT A m J A m J V/ns ℃ ℃ lbf- in N- m Thermal Characteristics Parameter Maximum Junction-to-Case Maximum Power Dissipation TC=25℃ Symbol Rth JC...