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40N10(F,B,H)
40A mps,100 Volts N-CHANNEL MOSFET
FEATURE
40A,100V,RDS(ON)=40mΩ@VGS=10V/20A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220AB 40N10
ITO-220AB 40N10F
TO-263 40N10B
TO-262 40N10H
Absolute Maximum Ratings(TC=25℃,unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Avalanche Current(Note1) Repetitive Avalanche Energy (Note1) Reverse Diode dV/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds
VDSS VGSS
ID IDM EAS IAR EAR dv/dt TJ,TSTG
TL
Mounting Torque
6-32 or M3 screw
40N10 100 ±20 40 100 500 40 50 4.
40N10H Datasheet
