900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






CHONGQING PINGYANG

8N60F Datasheet Preview

8N60F Datasheet

N-CHANNEL MOSFET

No Preview Available !

8N60(F,B,H)
8A mps,600 Volts N-CHANNEL MOSFET
FEATURE
8A,600V,RDS(ON)=1.0Ω@VGS=10V/4A
Low gate charge
Low Ciss
Fast switching
100% avalanche tested
Improved dv/dt capability
TO-220AB
8N60
ITO-220AB
8N60F
TO-263
8N60B
TO-262
8N60H
Absolute Maximum Ratings(TC=25,unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(Note1)
Single Pulse Avalanche Energy (Note 2)
Avalanche Current(Note1)
Repetitive Avalanche Energy (Note1)
Reverse Diode dV/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
TJ,TSTG
TL
Mounting Torque
6-32 or M3 screw
8N60
600
±30
8
32
550
8
21
5.5
-55 to +150
260
10
1.1
UNIT
V
A
mJ
A
mJ
V/ns
lbf·in
N·m
Thermal Characteristics
Parameter
Maximum Junction-to-Case
Maximum Power Dissipation
TC=25
Symbol
RthJC
PD
ITO-220
1.0
125
- 页码 -
TO-220
0.8
155
TO-262
TO-263
0.8
155
Units
/W
W
Rev. 14-1
http:// www.perfectway.cn




CHONGQING PINGYANG

8N60F Datasheet Preview

8N60F Datasheet

N-CHANNEL MOSFET

No Preview Available !

Electrical Characteristics (Tc=25,unless otherwise noted)
Parameter
Symbol
Test Conditions
Off Characteristics
Drain-Source Breakdown Voltage
Breakdown Temperature Coefficient
BVDSS
ΔBVDSS
VGS=0V,ID=250uA
Reference to 25℃,
/ΔTJ ID=250uA
Zero Gate Voltage Drain Current
IDSS VDS=600V,VGS=0V
Gate-Body Leakage Current,Forward
IGSSF
VGS=30V,VDS=0V
Gate-Body Leakage Current,Reverse
IGSSR
VGS=-30V,VDS=0V
On Characteristics
Gate-Source Threshold Voltage
VGS(th)
VDS=10V,ID=250uA
Drain-Source On-State Resistance
RDS(on)
VGS=10V,ID=4A
Dynamic Characteristics
Input Capacitance
Ciss VDS=25V,VGS=0V,
Output Capacitance
Coss f=1.0MHZ
Reverse Transfer Capacitance
Crss
Switching Characteristics
Turn-On Delay Time
td(on) VDD=300V,ID=8A,
Turn-On Rise Time
tr RG=25Ω
(Note4,5)
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Total Gate Charge
Qg VDS=480V,ID=8A,
Gate-Source Charge
Qgs VGS=10V, (Note4,5)
Gate-Drain Charge
Qgd
Drain-Source Body Diode Charcteristics and Maximum Ratings
Continuous Diode Forward Current
IS
Pulsed Diode Forward Current
ISM
Diode Forward Voltage
VSD IS=8A,VGS=0V
Reverse Recovery Time
trr VGS=0V,IS=8A,
Reverse Recovery Charge
Qrr dIF/dt=100A/us, (Note4)
Notes
1. Repetitive Rating:pulse width limited by maximum junction temperature.
2. VDD=50V,starling,L=16mH,Rg=25Ω,IAS=8A , TJ=25.
3. ISDID,dI/dt=_A/us,VDDBVDSS,starting TJ=25.
4. Pulse width≤300us;duty cycle≤2%.
5. Repetitive rating; pulse width limited by maximum junction temperature.
Mix Typ Max Units
600
0.6
--
--
--
V
V/
1 uA
10 uA
-10 uA
2
--
4
1
V
Ω
- - 1500 pF
- - 180 pF
- - 15 pF
13
ns
10
ns
26
ns
8 ns
40 nC
9 nC
20 nC
--
8
- - 32
- - 1.5
570
4.3
A
A
V
ns
uC
- 页码 -
Rev. 14-1
http:// www.perfectway.cn


Part Number 8N60F
Description N-CHANNEL MOSFET
Maker CHONGQING PINGYANG
PDF Download

8N60F Datasheet PDF






Similar Datasheet

1 8N60 N-Channel Power MOSFET
nELL
2 8N60 N-CHANNEL MOSFET
CHONGQING PINGYANG
3 8N60 N-Channel MOSFET Transistor
Inchange
4 8N60 N-CHANNEL POWER MOSFET
Unisonic Technologies
5 8N60-CBQ N-CHANNEL MOSFET
UTC
6 8N60-E N-CHANNEL POWER MOSFET
Unisonic Technologies
7 8N60A N-Channel Power MOSFET
nELL
8 8N60AF N-Channel Power MOSFET
nELL
9 8N60B N-CHANNEL MOSFET
CHONGQING PINGYANG





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy