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MBR10200CT Datasheet Preview

MBR10200CT Datasheet

10A High Power Schottky Barrier Rectifiers

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MBR1040CT THRU MBR10200CT
10A High Power Schottky Barrier Rectifiers
Features
Outline
• Electrostatic discharge (ESD) test under IEC6100-4-2
standard >16ΚV(ΜΒR1040CT~ΜΒR1065CT).
standard >10ΚV(ΜΒR10100CT~ΜΒR10200CT).
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Suffix "G" indicates Halogen-free part, ex.MBR1040CTG.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Mechanical data
Epoxy : UL94-V0 rated flame retardant.
Case : JEDEC TO-220AB molded plastic body over
passivated chip.
Lead : Axial leads, solderable per MIL-STD-202,
Method 208 guranteed.
Polarity: Color band denotes cathode end.
Mounting Position : Any.
Weight : Approximated 2.25 gram.
TO-220AB
0.410(10.20)
0.386(9.80)
0.230(5.85)MIN
0.146(3.70)
MIN
Marking code
123
0.053(1.35)
0.045(1.15)
0.035(0.90)
0.028(0.70)
0.250(6.35)MAX
0.190(4.82)MAX
0.055(1.40)
0.043(1.10)
0.624(15.87)MAX
0.500(12.70)MIN
PIN 1
PIN 3
0.102(2.60)
0.094(2.40)
PIN 2
0.028(0.70)
0.012(0.30)
Dimensions in inches and (millimeters)
Maximum ratings and electrical characteristics
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Forward rectified current
Forward surge current
Reverse current
Diode junction capacitance
Thermal resistance
Storage temperature
Conditions
See Fig.1
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
VR = VRRM TA = 25OC
VR = VRRM TA = 125OC
f=1MHz and applied 4V DC reverse voltage
Junction to ambient
Symbol
IO
IFSM
IR
CJ
RθJA
TSTG
MIN.
-55
TYP.
150
30
MAX.
10
125
0.1
10
+175
UNIT
A
A
mA
pF
OC/W
OC
Symbol
MBR1040CT
MBR1045CT
MBR1060CT
MBR1065CT
MBR10100CT
MBR10150CT
MBR10200CT
Marking code
Max.
repetitive peak
reverse voltage
VRRM (V)
MBR1040CT
40
MBR1045CT
45
MBR1060CT
60
MBR1065CT
65
MBR10100CT
100
MBR10150CT
150
MBR10200CT
200
Max.
RMS voltage
VRMS (V)
28
31.5
42
45.5
70
105
140
Max. DC
blocking voltage
VR (V)
40
45
60
65
100
150
200
Max.
forward voltage
@5A, TA = 25OC
VF (V)
0.70
0.79
0.81
0.87
0.90
Max.
forward voltage
@5A, TA = 125OC
VF (V)
Operating
temperature
TJ (OC)
0.57
0.70
-50 ~ +150
0.71
0.77
0.80
-50 ~ +175
Document ID : DS-11K55
1 Issued Date : 2010/05/05
Revised Date : 2012/05/31
Revision : C




CITC

MBR10200CT Datasheet Preview

MBR10200CT Datasheet

10A High Power Schottky Barrier Rectifiers

No Preview Available !

MBR1040CT THRU MBR10200CT
10A High Power Schottky Barrier Rectifiers
Rating and characteristic curves
Fig.1 - Forward Current Derating Curve
12
RESISTIVE OR INDUCTIVE LOAD
10
8.0
MBR1040CT~MBR10100CT
6.0
4.0 MBR10150CT~MBR10200CT
2.0 single phase half wave 60Hz
resistive or inductive load
0 25 50 75 100 125 150 175
Lead Temperature ( OC)
Fig. 3.1 - Typical Instantaneous Forward
Characteristics
50
MBR1040CT
10
TJ=125OC
1
MBR1060CT
0.1
0.01
TJ=25OC
0.2 0.4 0.6 0.8 1.0
Instantaneous Forward Voltage (Volts)
1.2
Fig. 3.3 - Typical Instantaneous Forward
Characteristics
100
MBR10150CT
MBR10200CT
10
TJ=125OC
TJ=25OC
1
0 0.2 0.4 0.6 0.8 1.0
Instantaneous Forward Voltage (Volts)
1.2
Fig. 2 - Maximum Non-Repetitive Peak
Forward Surge Current
150
125
100
75
50
25
0
1
10
Number of Cycles at 60 Hz
100
Fig. 3.2 - Typical Instantaneous Forward
Characteristics
50
MBR10100CT
10
TJ=125OC
1.0
0.5 TJ=25OC
0 0.2 0.4 0.6 0.8 1.0
Instantaneous Forward Voltage (Volts)
Fig. 4 - Typical Reverse Characteristics
100
10
TJ=150OC
1
TJ=125OC
0.1
0.01
TJ=75OC
0.001
0.0001
0
TJ=25OC
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage ( %)
Document ID : DS-11K55
2 Issued Date : 2010/05/05
Revised Date : 2012/05/31
Revision : C


Part Number MBR10200CT
Description 10A High Power Schottky Barrier Rectifiers
Maker CITC
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MBR10200CT Datasheet PDF






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