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CMX90A705 - Ka-Band GaN Power Amplifier

Description

The CMX90A705 is a packaged two-stage Kaband GaN linear power amplifier delivering 37.4 dBm (5.5 W) of saturated power with 16.5 dB of small signal gain.

It can be used as both driver stage and final stage PA in a commercial satellite communication terminal.

Features

  • Frequency range 27.5.
  • 31 GHz.
  • Saturated output power 37.4 dBm.
  • Small signal gain 16.5 dB.
  • RF ports matched to 50 Ω and DC blocked.
  • ACPR better than -28 dBc @ 30 dBm avg.
  • Power added efficiency 22 % @ Psat.
  • Dual-side biasing.
  • DC bias 100mA @ +27.5 V Block Diagram Ordering Information Part Number CMX90A705A6-R701 CMX90A705A6-R705 EV90A705.

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Datasheet preview – CMX90A705

Datasheet Details

Part number CMX90A705
Manufacturer CML
File Size 1.24 MB
Description Ka-Band GaN Power Amplifier
Datasheet download datasheet CMX90A705 Datasheet
Additional preview pages of the CMX90A705 datasheet.

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Full PDF Text Transcription

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CMX90A705 5.5W Ka-Band GaN Power Amplifier Description The CMX90A705 is a packaged two-stage Kaband GaN linear power amplifier delivering 37.4 dBm (5.5 W) of saturated power with 16.5 dB of small signal gain. It can be used as both driver stage and final stage PA in a commercial satellite communication terminal. RF ports are nominally matched to 50 Ω for ease of use, with integrated DC blocking capacitors at RF input and output. The PCB will incorporate drain and gate feed decoupling capacitors suitable for modulated signals e.g. QPSK. The active device is fabricated using state-of-theart 0.15 µm gate length GaN-on-SiC process and packaged in a small form factor, 4 x 4 mm thermally enhanced plastic air-cavity QFN.
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