Full PDF Text Transcription for C3M0016120D (Reference)
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C3M0016120D. For precise diagrams, and layout, please refer to the original PDF.
VDS 1200 V C3M0016120D ID @ 25˚C 115 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 16 mΩ N-Channel Enhancement Mode Features Package • 3rd generation Si...
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16 mΩ N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFET technology • High blocking voltage with low on-resistance • High-speed switching with low capacitances • • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits • Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduce cooling requirements • Increase power density • Increase system switching frequency Applications • Solar inverters • EV motor drive • High voltage DC/DC converters • Switched mode power supplies • Load switch Part Number Package Marking C3M0016120D Maximum Ratings
C3M0016120D Datasheet
