* Package
* 3rd generation SiC MOSFET technology
* Optimized package with separate driver source pin
* 8mm of creepage distance between drain and source
* High blocking voltage with low on-resistance
* High-speed switching with low capacitances
C3M0016120K Datasheet (1.03 MB)
C3M0016120K
CREE
1.03 MB
Silicon carbide power mosfet.
VDS 1200 V C3M0016120K ID @ 25˚C 115 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 16 mΩ N-Channel Enhancement Mode.
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