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CMPA2560025F Datasheet Preview

CMPA2560025F Datasheet

GaN MMIC Power Amplifier

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CMPA2560025F
25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier
Cree’s CMPA2560025F is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).
GaN has superior properties compared to silicon or gallium arsenide, including
higher breakdown voltage, higher saturated electron drift velocity and higher
thermal conductivity. GaN HEMTs also offer greater power density and wider
bandwidths compared to Si and GaAs transistors. This MMIC contains a
two-stage reactively matched amplifier enabling very wide bandwidths to
be achieved in a small footprint screw-down package featuring a Copper-
Tungsten heat-sink.
PaPckNa:gCeMTPyApe2:576800002159F
Typical Performance Over 2.5-6.0 GHz (TC = 25˚C)
Parameter
2.5 GHz
4.0 GHz
6.0 GHz
Gain
27.5 24.3 23.1
Saturated
Output
Power,
P1
SAT
35.8 37.5 25.6
Power Gain @ POUT 43 dBm
23.1 20.9 16.3
PAE @ POUT 43 dBm
31.5 32.8 30.7
Note1: PSAT is defined as the RF output power where the device starts to draw positive gate current in the range of 7-13 mA.
Units
dB
W
dB
%
Features
24 dB Small Signal Gain
25 W Typical PSAT
Operation up to 28 V
High Breakdown Voltage
High Temperature Operation
Applications
Ultra Broadband Amplifiers
Fiber Drivers
Test Instrumentation
EMC Amplifier Drivers
Subject to change without notice.
www.cree.com/rf
Figure 1.
1




CREE

CMPA2560025F Datasheet Preview

CMPA2560025F Datasheet

GaN MMIC Power Amplifier

No Preview Available !

Absolute Maximum Ratings (not simultaneous) at 25˚C
Parameter
Drain-source Voltage
Gate-source Voltage
Storage Temperature
Operating Junction Temperature
Forward Gate Current
Screw Torque
Thermal Resistance, Junction to Case
Symbol
VDSS
VGS
TSTG
TJ
IG
T
RθJC
Rating
84
-10, +2
-65, +150
225
13
40
2.5
Units
VDC
VDC
˚C
˚C
mA
in-oz
˚C/W
Electrical Characteristics (Frequency = 2.5 GHz to 6.0 GHz unless otherwise stated; TC = 25˚C)
Characteristics
DC Characteristics
Gate Threshold Voltage
Gate Quiescent Voltage
Drain-Source Breakdown Voltage
Saturated Drain Current1
RF Characteristics2
Small Signal Gain
Symbol
V(GS)TH
V(GS)Q
VBD
IDC
S21
Input Return Loss
S11
Output Return Loss
S22
Power Output1
Power Output2
Power Output3
Power Added Efficiency1
Power Added Efficiency2
Power Added Efficiency3
Power Gain1
Power Gain2
Power Gain3
POUT
POUT
POUT
PAE
PAE
PAE
GP
GP
GP
Output Mismatch Stress
VSWR
Notes:
1 Scaled from PCM data.
2 All data CW tested in CMPA2560025F-AMP.
Min.
-3.8
84
8.0
19.5
22.0
12.5
15.5
34
20
24
17.5
15.0
16.0
Typ.
-3.0
-2.7
100
9.7
24
-8
-8
30
17
20
40
26
30
18.8
16.3
17.0
Max.
Units Conditions
-2.3 V VDS = 10 V, ID = 20 mA
VDC
VDD = 28 V, ID = 1200 mA
– V VGS = -8 V, ID = 20 mA
– A VDS = 6.0 V, VGS = 2.0 V
– dB VDD = 28 V, ID = 1200 mA
-5 dB VDD = 28 V, ID = 1200 mA
-3 dB VDD = 28 V, ID = 1200 mA
– W VDD = 28 V, ID = 1200 mA, PIN = 26 dBm, Freq = 4.0 GHz
– W VDD = 28 V, ID = 1200 mA, PIN = 26 dBm, Freq = 5.0 GHz
– W VDD = 28 V, ID = 1200 mA, PIN = 26 dBm, Freq = 6.0 GHz
– % VDD = 28 V, ID = 1200 mA, PIN = 26 dBm, Freq = 4.0 GHz
– % VDD = 28 V, ID = 1200 mA, PIN = 26 dBm, Freq = 5.0 GHz
– % VDD = 28 V, ID = 1200 mA, PIN = 26 dBm, Freq = 6.0 GHz
– dB VDD = 28 V, ID = 1200 mA, PIN = 26 dBm, Freq = 4.0 GHz
– dB VDD = 28 V, ID = 1200 mA, PIN = 26 dBm, Freq = 5.0 GHz
– dB VDD = 28 V, ID = 1200 mA, PIN = 26 dBm, Freq = 6.0 GHz
5 : 1 Y No damage at all phase angles,
VDD = 28 V, IDQ = 1200 mA, PIN = 26 dBm
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
2 CMPA2560025F Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf


Part Number CMPA2560025F
Description GaN MMIC Power Amplifier
Maker CREE
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