MACOM Technology Solutions CMPA2560025F
The CMPA2560025F is a gallium nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC). This MMIC contains a two-stage reactively matched amplifier enabling very wide bandwidths to be achieved in a small footprint screw-down package featuring a CopperTungsten heatsink.| Part No. | CMPA2560025F |
|---|---|
| Datasheet | CMPA2560025F Download |
| Manufacturer |  MACOM Technology Solutions |
| Description | GaN MMIC Power Amplifier |
| Buy | Stock & Price |
DESCRIPTION
GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors.FEATURES
● 24 dB small signal gain● 25 W typical PSAT
● Operation up to 28 V
● High breakdown voltage
● High temperature operation
APPLICATIONS
● Ultra broadband amplifiers● Fiber drivers
● Test instrumentation
● EMC amplifier drivers Package Types: 780019 PN’s: CMPA2560025F Typical Performance Over 2.5 - 6.0 GHz (TC = 25 °C) Parameter 2.5 GHz 4.0 GHz 6.0 GHz Gain 27.5 24.3 23.1 Saturated Output Power, P1 SAT Power Gain @ POUT 43 dBm PAE @ POUT 43 dBm 35.8 37.5 25.6 23.1 20.9 16.3 31.5 32.8 30.7 Note: 1 PSAT is defined as the RF output power where the device starts to draw positive gate current in the range of 7-13 mA. Units dB W dB % 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
