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CMPA2560025D
25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier
Description
Wolfspeed’s CMPA2560025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved.
Typical Performance Over 2.5-6.0 GHz (TC = 25ºC)
Parameter
Gain
Saturated
Output
Power,
P1 SAT
Power Gain @ POUT = 43 dBm
PAE @ POUT 43 dBm
2.5 GHz 27.5 35.8 23.1 31.
CMPA2560025D Datasheet
