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CMPA2560025D - Power Amplifier

General Description

Wolfspeed’s CMPA2560025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).

Key Features

  • 24 dB Small Signal Gain.
  • 25 W Typical PSAT.
  • Operation up to 28 V.
  • High Breakdown Voltage.
  • High Temperature Operation.
  • Size 0.180 x 0.145 x 0.004 inches.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Description Wolfspeed’s CMPA2560025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved. Typical Performance Over 2.5-6.0 GHz (TC = 25ºC) Parameter Gain Saturated Output Power, P1 SAT Power Gain @ POUT = 43 dBm PAE @ POUT 43 dBm 2.5 GHz 27.5 35.8 23.1 31.