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CMPA2560025F
25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier
Cree’s CMPA2560025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier enabling very wide bandwidths to be achieved in a small footprint screw-down package featuring a CopperTungsten heat-sink.
PaPckNa:gCeMTPyApe2:576800002159F
Typical Performance Over 2.5-6.0 GHz (TC = 25˚C)
Parameter
2.5 GHz
4.0 GHz
6.0 GHz
Gain
27.
CMPA2560025F Datasheet
