Overview: CMPA2560025F
25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier
Cree’s CMPA2560025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties pared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths pared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier enabling very wide bandwidths to be achieved in a small footprint screw-down package featuring a CopperTungsten heat-sink. PaPckNa:gCeMTPyApe2:576800002159F Typical Performance Over 2.5-6.0 GHz (TC = 25˚C) Parameter 2.5 GHz 4.0 GHz 6.0 GHz Gain 27.5 24.3 23.1 Saturated Output Power, P1 SAT 35.8 37.5 25.6 Power Gain @ POUT 43 dBm 23.1 20.9 16.3 PAE @ POUT 43 dBm 31.5 32.8 30.7 Note1: PSAT is defined as the RF output power where the device starts to draw positive gate current in the range of 7-13 mA.
