Datasheet Details
| Part number | CMPA601C025F |
|---|---|
| Manufacturer | Cree (now Wolfspeed) |
| File Size | 2.35 MB |
| Description | GaN MMIC Power Amplifier |
| Datasheet |
|
|
|
|
| Part number | CMPA601C025F |
|---|---|
| Manufacturer | Cree (now Wolfspeed) |
| File Size | 2.35 MB |
| Description | GaN MMIC Power Amplifier |
| Datasheet |
|
|
|
|
CMPA601C025F 25 W, 6.0 - 12.0 GHz, GaN MMIC, Power Amplifier The CMPA601C025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate, using a 0.25 μm gate length fabrication process.
The semiconductor offers 25 Watts of power from 6 to 12 GHz of instantaneous bandwidth.
The GaN HEMT MMIC is housed in a thermally-enhanced, 10lead 25 mm x 9.9 mm metal/ceramic flanged package.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
![]() |
CMPA601C025F | Power Amplifier | Wolfspeed |
![]() |
CMPA601C025D | Power Amplifier | Wolfspeed |
| Part Number | Description |
|---|---|
| CMPA0060002F | GaN MMIC Power Amplifier |
| CMPA0060025F | GaN MMIC Power Amplifier |
| CMPA0527005F | GaN HEMT |
| CMPA1D1E025F | Power Amplifier |
| CMPA1D1E080F | Power Amplifier |
| CMPA2560025F | GaN MMIC Power Amplifier |
| CMPA5259025F | GaN MMIC |
| CMPA5259050F | GaN MMIC |
| CMPA5585030F | Power Amplifier |
| CMPA801B025 | Power Amplifier |