Datasheet4U Logo Datasheet4U.com

GTVA261701FA Datasheet - CREE

Thermally-Enhanced High Power RF GaN on SiC HEMT

GTVA261701FA Features

* input matching, high efficiency, and a thermally-enhanced package with earless flange. GTVA261701FA Package H-37265J-2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 200 mA, ƒ = 2620 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth 32 80 28 24 E

GTVA261701FA Datasheet (450.26 KB)

Preview of GTVA261701FA PDF

Datasheet Details

Part number:

GTVA261701FA

Manufacturer:

CREE

File Size:

450.26 KB

Description:

Thermally-enhanced high power rf gan on sic hemt.

📁 Related Datasheet

GTVA261701FA Thermally-Enhanced High Power RF GaN HEMT (Infineon)

GTVA261701FA Thermally-Enhanced High Power RF GaN on SiC HEMT (Wolfspeed)

GTVA262701FA Thermally-Enhanced High Power RF GaN on SiC HEMT (Wolfspeed)

GTVA263202FC Thermally-Enhanced High Power RF GaN on SiC HEMT (Wolfspeed)

GTVA212701FA Thermally-Enhanced High Power RF GaN on SiC HEMT (MACOM)

GTVA220701FA Thermally-Enhanced High Power RF GaN HEMT (Infineon)

GTVA221701FA Thermally-Enhanced High Power RF GaN HEMT (Infineon)

GTVA104001FA High Power RF GaN (Wolfspeed)

GTVA107001EC High Power RF GaN (Wolfspeed)

GTVA107001FC High Power RF GaN (Wolfspeed)

TAGS

GTVA261701FA Thermally-Enhanced High Power GaN SiC HEMT CREE

Image Gallery

GTVA261701FA Datasheet Preview Page 2 GTVA261701FA Datasheet Preview Page 3

GTVA261701FA Distributor