| Part number | GTVA261701FA |
|---|---|
| Datasheet | GTVA261701FA-Wolfspeed.pdf |
| File Size | 743.61 KB |
| Manufacturer | Wolfspeed |
| Description | Thermally-Enhanced High Power RF GaN on SiC HEMT |
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The GTVA261701FA is a 170-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
GTVA261701FA | Thermally-Enhanced High Power RF GaN HEMT | Infineon |
 |
GTVA261701FA | Thermally-Enhanced High Power RF GaN on SiC HEMT | CREE |
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