GTVA261701FA Description
The GTVA261701FA is a 170-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.
GTVA261701FA Key Features
- GaN on SiC HEMT technology
- Input Matched
- Typical CW performance, 2690 MHz, 48 V, single side
- Output power at P3dB = 170 W
- Efficiency = 75%
- Gain = 15 dB
- Human Body Model, Class 1B (per ANSI/ESDA/ JEDEC JS-001)
- Capable of handling 10:1 VSWR @48 V, 40 W (CW) output power
- RoHS-pliant
- Typ. 17 43 -29