Datasheet4U Logo Datasheet4U.com

GTVA261701FA - Thermally-Enhanced High Power RF GaN on SiC HEMT

General Description

The GTVA261701FA is a 170-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.

Key Features

  • input matching, high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37265J-2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 200 mA, ƒ = 2620 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth 32 80 28 60 24 Efficiency 40 20 20 16 Gain 0 12 -20 8 -40 4 PAR @ 0.01% CCDF -60 0 g261701fa-gr1a -80 27 31 35 39 43 47 51 Average Output Power (dBm) Features.
  • GaN on SiC HEMT technology.

📥 Download Datasheet

Datasheet Details

Part number GTVA261701FA
Manufacturer Wolfspeed
File Size 743.61 KB
Description Thermally-Enhanced High Power RF GaN on SiC HEMT
Datasheet download datasheet GTVA261701FA Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
GTVA261701FA Thermally-Enhanced High Power RF GaN HEMT Infineon
GTVA261701FA Thermally-Enhanced High Power RF GaN on SiC HEMT CREE

Other Datasheets by Wolfspeed

Part Number Description
GTVA262701FA Thermally-Enhanced High Power RF GaN on SiC HEMT
GTVA263202FC Thermally-Enhanced High Power RF GaN on SiC HEMT
GTVA104001FA High Power RF GaN
GTVA107001EC High Power RF GaN
GTVA107001FC High Power RF GaN
GTVA123501FA Thermally-Enhanced High Power RF GaN
GTVA126001EC Thermally-Enhanced High Power RF GaN HEMT
GTVA126001FC Thermally-Enhanced High Power RF GaN HEMT
GTVA355001EC Thermally-Enhanced High Power RF GaN on SiC HEMT
GTVA355001FC Thermally-Enhanced High Power RF GaN on SiC HEMT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GTVA261701FA Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz Description The GTVA261701FA is a 170-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37265J-2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 200 mA, ƒ = 2620 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth 32 80 28 60 24 Efficiency 40 20 20 16 Gain 0 12 -20 8 -40 4 PAR @ 0.