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GTVA261701FA
Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz
Description
The GTVA261701FA is a 170-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.
Package Types: H-37265J-2
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up
VDD = 48 V, IDQ = 200 mA, ƒ = 2620 MHz 3GPP WCDMA signal,
10 dB PAR, 3.84 MHz bandwidth
32
80
28
60
24
Efficiency
40
20
20
16
Gain
0
12
-20
8
-40
4
PAR @ 0.
GTVA261701FA Datasheet
