Datasheet4U Logo Datasheet4U.com

GTVA261701FA - Thermally-Enhanced High Power RF GaN HEMT

General Description

The GTVA261701FA is a 170-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.

Key Features

  • input matching, high efficiency, and a thermally-enhanced package with earless flange. Features.
  • Input Matched.
  • Typical Pulsed CW performance, 2690 MHz, 48 V, single side - Output power at P3dB = 170 W - Efficiency = 72% - Gain = 16 dB.
  • GaN HEMT technology.
  • High power density.
  • High efficiency.
  • RoHS-compliant Advance Specification Data Sheets describe products that are being considered by Infineon for development and market introductio.

📥 Download Datasheet

Datasheet Details

Part number GTVA261701FA
Manufacturer Infineon
File Size 119.64 KB
Description Thermally-Enhanced High Power RF GaN HEMT
Datasheet download datasheet GTVA261701FA Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
GTVA261701FA Thermally-Enhanced High Power RF GaN on SiC HEMT CREE
GTVA261701FA Thermally-Enhanced High Power RF GaN on SiC HEMT Wolfspeed

Other Datasheets by Infineon

Part Number Description
GTVA220701FA Thermally-Enhanced High Power RF GaN HEMT
GTVA221701FA Thermally-Enhanced High Power RF GaN HEMT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
advance specification GTVA261701FA advance specification Thermally-Enhanced High Power RF GaN HEMT 170 W, 50 V, 2620 – 2690 MHz Description The GTVA261701FA is a 170-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • Input Matched • Typical Pulsed CW performance, 2690 MHz, 48 V, single side - Output power at P3dB = 170 W - Efficiency = 72% - Gain = 16 dB • GaN HEMT technology • High power density • High efficiency • RoHS-compliant Advance Specification Data Sheets describe products that are being considered by Infineon for development and market introduction.