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GTVA261701FA - Thermally-Enhanced High Power RF GaN HEMT

Description

The GTVA261701FA is a 170-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.

Features

  • input matching, high efficiency, and a thermally-enhanced package with earless flange. Features.
  • Input Matched.
  • Typical Pulsed CW performance, 2690 MHz, 48 V, single side - Output power at P3dB = 170 W - Efficiency = 72% - Gain = 16 dB.
  • GaN HEMT technology.
  • High power density.
  • High efficiency.
  • RoHS-compliant Advance Specification Data Sheets describe products that are being considered by Infineon for development and market introductio.

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Datasheet Details

Part number GTVA261701FA
Manufacturer Infineon
File Size 119.64 KB
Description Thermally-Enhanced High Power RF GaN HEMT
Datasheet download datasheet GTVA261701FA Datasheet
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Full PDF Text Transcription

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advance specification GTVA261701FA advance specification Thermally-Enhanced High Power RF GaN HEMT 170 W, 50 V, 2620 – 2690 MHz Description The GTVA261701FA is a 170-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • Input Matched • Typical Pulsed CW performance, 2690 MHz, 48 V, single side - Output power at P3dB = 170 W - Efficiency = 72% - Gain = 16 dB • GaN HEMT technology • High power density • High efficiency • RoHS-compliant Advance Specification Data Sheets describe products that are being considered by Infineon for development and market introduction.
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