GTVA261701FA

Manufacturer: Infineon

GTVA261701FA datasheet by Infineon.

GTVA261701FA Datasheet Details

Part number	GTVA261701FA
Datasheet	GTVA261701FA-Infineon.pdf
File Size	119.64 KB
Manufacturer	Infineon
Description	Thermally-Enhanced High Power RF GaN HEMT

The GTVA261701FA is a 170-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.

Brand Logo	Part Number	Description	Other Manufacturers
	GTVA261701FA	Thermally-Enhanced High Power RF GaN on SiC HEMT	CREE
	GTVA261701FA	Thermally-Enhanced High Power RF GaN on SiC HEMT	Wolfspeed

Part Number	Description
GTVA220701FA	Thermally-Enhanced High Power RF GaN HEMT
GTVA221701FA	Thermally-Enhanced High Power RF GaN HEMT